- patented trench mos barrier schottky technology - excellent high temperature stability - low forward voltage - lower power loss/ high efficiency - high forward surge capability symbol unit v rrm v dv/dt v/ s v br v typ. max. typ. max typ. max. i f = 5a 0.64 - 0.68 - 0.73 - i f = 10a 0.74 0.81 0.78 0.87 0.81 1.10 i f = 5a 0.55 - 0.56 - 0.59 - i f = 10a 0.63 0.70 0.63 0.69 0.67 0.73 t j = 25c - 200 - 250 - 150 a t j = 125c 1.510515310ma r jc o c/w t j o c t stg o c document number ds_ds_d1401006 version:d14 molding compound meets ul 94 v-0 flammability rating base p/n with suffix "g" on packing code - halogen-free, rohs compliant terminal matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test instantaneous reverse current per diode at rated reverse voltage i r v ac isolation voltage from terminal to heatsink t = 1 min breakdown voltage ( ir =1.0ma, ta =25c ) 120 instantaneous forward voltage per diode ( note1 ) t j = 25c v f t j = 125c v f 100 v v 150 a features i fsm maximum ratings and electrical characteristics (ta=25 o c unless otherwise noted) voltage rate of change (rated v r ) per diode mechanical data operating junction temperature range storage temperature range - 55 to + 150 - 55 to + 150 typical thermal resistance per diode note 1: pulse test with pulse width=300us, 1% duty cycle 2.5 4.9 3.8 TSF20H100C polarity : as marked weight 1.7 gram (approximately) maximum average forward rectified current mounting torque : 5 in-lbs. max. maximum repetitive peak reverse voltage parameter TSF20H100C thru tsf20h150c taiwan semiconductor a i f(av) ito-220ab per device - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec case : ito-220ab tsf20h120c tsf20h150c trench mos barrier schottky rectifier 10 110 10000 1500 150 120 100 20 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode
document number ds_ds_d1401006 version:d14 preferred p/n description green compound code packing code part no. tsf20h120c ratings and characteristics curves tsf20h120c c0g tsf20h120c c0 g tsf20h120c c0 50 / tube package c0 ito-220ab note 1: "xxx" defines voltage from 100v (TSF20H100C) to 150v (tsf20h150c) example TSF20H100C thru tsf20h150c taiwan semiconductor (ta=25 o c unless otherwise noted) ordering information part no. tsf20hxxxc packing code green compound packing c0 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 tj=25 o c tj=125 o c tj=150 o c tj=100 o c TSF20H100C fig. 2 typical forward characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 with heatsink 4in x 6in x 0.25in al-plate TSF20H100C tsf20h150c tsf20h120c fig. 1 forward current derating curve average forward current (a) instantaneous forward current (a) case temperature ( o c) forward voltage (v) 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 3 typical forward characteristics tj=25 o c tj=125 o c tj=150 o c tj=100 o c tsf20h120c forward voltage (v) instantaneous forward current (a) 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 tj=25 o c tj=100 o c tj=125 o c tj=150 o c instantaneous forward current (a) forward voltage (v) tsf20h150c fig. 4 typical forward characteristics
package outline dimensions min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.80 - 0.071 o 2.41 2.67 0.095 0.105 p/n = specific device code yww = date code f = factory code document number ds_ds_d1401006 version:d14 TSF20H100C thru tsf20h150c taiwan semiconductor marking diagram dim. unit(mm) unit(inch) 10 100 1000 10000 0.1 1 10 100 f=1.0mhz vslg=50mvp-p fig. 8 typical junction capacitance reverse voltage (v) capacitance (pf) 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 tj=25 o c tj=100 o c tj=125 o c tj=150 o c instantaneous reverse current (ma) percent of rated peak reverse voltage (%) 0.0001 0.001 0.01 0.1 1 10 10 20 30 40 50 60 70 80 90 100 tj=25 o c tj=100 o c tj=125 o c tj=150 o c percent of rated peak reverse voltage (%) tsf20h150c fig. 6 typical reverse characteristics fig. 7 typical reverse characteristics instantaneous r everse current (ma) 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 t j =25 o c t j =125 o tj=100 o c tj=150 o c percent of rated peak reverse voltage.(%) instantaneous r everse current (ma) fig. 5 typical reverse characteristics TSF20H100C tsf20h120c
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